The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
May. 23, 2003
Applicants:
Seiichiro Takahashi, Ageo, JP;
Makoto Ikeda, Ageo, JP;
Hiroshi Watanabe, Ageo, JP;
Inventors:
Assignee:
Mitsui Mining & Smelting Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C01B 13/14 (2006.01); C01G 17/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides an ITO sputtering target for forming a high-resistance transparent conductive film which target can be used virtually in a DC magnetron sputtering apparatus and can form a high-resistance, transparent film, and a method for producing a high-resistance transparent conductive film. The sputtering target for forming a high-resistance transparent conductive film having a resistivity of about (0.8–10)×10Ωcm contains indium oxide, an insulating oxide, and optionally tin oxide.