The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Jul. 02, 2004
Takayuki Iwasaki, Hitachi, JP;
Kozo Sakamoto, Hitachinaka, JP;
Masaki Shiraishi, Hitachi, JP;
Nobuyoshi Matsuura, Takasaki, JP;
Tomoaki Uno, Takasaki, JP;
Takayuki Iwasaki, Hitachi, JP;
Kozo Sakamoto, Hitachinaka, JP;
Masaki Shiraishi, Hitachi, JP;
Nobuyoshi Matsuura, Takasaki, JP;
Tomoaki Uno, Takasaki, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In a power supply of a synchronous rectification type, the self-turn on phenomenon of MOSFET is suppressed without increase of the drive loss to thereby improve the power efficiency. In a synchronous rectifier circuit, a threshold value of a commutation MOSFET is made higher than that of a rectification MOSFET and particularly a threshold value of a commutation MOSFETis made 0.5V or more higher than that of a rectification MOSFET. The threshold value of the rectification MOSFETis lower than 1.5V and the threshold of the commutation MOSFETis higher than 2.0V.