The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2006

Filed:

Aug. 21, 2003
Applicants:

Cheng-ming Yih, Hsin-Chu, TW;

Huei-huarng Chen, Chang-Hua, TW;

Hsuan-ling Kao, Taipei, TW;

Inventors:

Cheng-Ming Yih, Hsin-Chu, TW;

Huei-Huarng Chen, Chang-Hua, TW;

Hsuan-Ling Kao, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure of a nonvolatile memory array with low source line sheet resistance is disclosed in this present invention. The key aspect of this present invention is employing a buried conductive region as the source line of a nonvolatile memory array. The topology of the above-mentioned buried conductive region is different from the source line in the prior art. Therefore, this invention can provide a nonvolatile memory array for reducing the source line sheet resistance and achieving the reliability and the operating performance of the nonvolatile memory array.


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