The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Oct. 07, 2003
Nobuyuki Otsuka, Hyogo, JP;
Yoshiaki Hasegawa, Osaka, JP;
Gaku Sugahara, Nara, JP;
Yasutoshi Kawaguchi, Osaka, JP;
Nobuyuki Otsuka, Hyogo, JP;
Yoshiaki Hasegawa, Osaka, JP;
Gaku Sugahara, Nara, JP;
Yasutoshi Kawaguchi, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.