The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Sep. 05, 2003
Scott Bell, San Jose, CA (US);
Srikanteswara Dakshina-murthy, Wappiners Falls, NY (US);
Chih-yuh Yang, San Jose, CA (US);
Ashok M. Khathuria, San Jose, CA (US);
Scott Bell, San Jose, CA (US);
Srikanteswara Dakshina-Murthy, Wappiners Falls, NY (US);
Chih-Yuh Yang, San Jose, CA (US);
Ashok M. Khathuria, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a method for reducing resist height erosion in a gate etch process comprises a step of forming a first resist mask on an anti-reflective coating layer situated over a substrate, where the first resist mask has a first width. The anti-reflective coating layer may be, for example, an organic material. The method further comprises a step of trimming the first resist mask to form a second resist mask, where the second resist mask has a second width, and where the second width is less than the first width. The step of trimming the first resist mask may further comprise, for example, etching the anti-reflective coating layer. According to this exemplary embodiment, the method further comprises a step of performing an HBr plasma treatment on the second resist mask, wherein the HBr plasma treatment causes a vertical etch rate of the second resist mask to decrease.