The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Feb. 20, 2004
Yangsung Joo, Boise, ID (US);
Yangsung Joo, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Circuits and methods for driving a DRAM sense amplifier having low threshold voltage PMOS transistors are described. The source terminal of a low VPMOS transistor is maintained at ground potential during DRAM standby mode. The source terminal of the low VPMOS transistor is raised to an intermediate supply voltage responsive to a transition from DRAM standby mode to either DRAM read mode, write mode, or refresh mode and prior to development of a differential voltage between the gate and drain terminals of the low VPMOS transistor. These circuits and methods advantageously limit current loss through the low VPMOS transistor when the differential voltage develops between the gate and drain terminals of that low VPMOS transistor and in the event of a word line and digital line short-circuit.