The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Oct. 29, 2003
Sang-won Yeo, Seoul, KR;
Jeong-sic Jeon, Gyeonggi-do, KR;
Chang-jin Kang, Suwon-shi, KR;
Chang-won Lee, Gwacheon-si, KR;
Sang-Won Yeo, Seoul, KR;
Jeong-Sic Jeon, Gyeonggi-do, KR;
Chang-Jin Kang, Suwon-shi, KR;
Chang-Won Lee, Gwacheon-si, KR;
Abstract
A method for fabricating a semiconductor device, including forming a gate insulating film and a gate electrode film on a semiconductor substrate, and patterning the gate electrode film to form a gate electrode. A portion of the gate insulating film is removed to form an undercut region beneath the gate electrode. A buffer silicon film is formed over an entire surface of the resultant substrate to cover the gate electrode and to fill the undercut region. The buffer silicon film is selectively oxidized to form a buffer silicon oxide film.