The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7001784 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 21, 2006

Filed:

Sep. 19, 2003
Applicants:

Jyh-shiou Hsu, Hsin-Chu, TW;

Pin-yi Hsin, Hsin-Chu, TW;

Jeng Yu, Hsin-Chu, TW;

Inventors:

Jyh-Shiou Hsu, Hsin-Chu, TW;

Pin-Yi Hsin, Hsin-Chu, TW;

Jeng Yu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating final spacers having a target width comprises the following steps. Initial spacers, each having an initial width that is less than the target width, are formed over the opposing side walls of a gate electrode portion. The difference between the initial spacer width and the target width is determined. A second spacer layer having a thickness equal to the determined difference between the initial width of the initial spacers and the target width is formed upon the initial spacers and the structure. The second spacer layer is etched to leave second spacer layer portions extending from the initial spacers to form the final spacers.


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