The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Dec. 02, 2002
Applicants:
Sung-un Kwean, Gyeonggi-do, KR;
Jae-seung Hwang, Suwon, KR;
Inventors:
Sung-Un Kwean, Gyeonggi-do, KR;
Jae-Seung Hwang, Suwon, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a mask comprises forming a mask layer including nitrogen, forming a photoresist pattern on the mask layer and etching the mask layer using a mixes gas including a first gas adapted for etching the mask layer and a second gas for increasing selectivity of the photoresist pattern, thereby forming a hard mask. In this manner, selectivity of the photoresist is improved while a high etching ratio of the nitride layer is maintained when forming a hard mask.