The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Sep. 18, 2003
Douglas R. Hackler, Sr., Boise, ID (US);
Richard Alan Hayhurst, Nampa, ID (US);
Michael Paul Goldston, Star, ID (US);
Douglas R. Hackler, Sr., Boise, ID (US);
Richard Alan Hayhurst, Nampa, ID (US);
Michael Paul Goldston, Star, ID (US);
American Semiconductor, Inc., Boise, ID (US);
Abstract
Disclosed is a high-performance, RF-capable MIM capacitor structure and process for the manufacture thereof, which are compatible with discrete or integrated processes. The invention is compatible with standard semiconductor processing techniques and provides increased capacitance per unit area for a wide variety of capacitor requirements. The invention exploits vertical dimensions, reduces the chip area required for capacitors, and facilitates the use of advanced materials, such as high-k dielectric materials.