The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2006

Filed:

Jul. 14, 2003
Applicants:

Rie Itoh, Osaka, JP;

Noriaki Matsuno, Hyogo, JP;

Masato Tsunoda, Kyoto, JP;

Inventors:

Rie Itoh, Osaka, JP;

Noriaki Matsuno, Hyogo, JP;

Masato Tsunoda, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor integrated circuit device () is composed of an LSI function unit () and a shield wiring layer () formed on the unit. The LSI function unit () includes a semiconductor substrate () and a first insulating film (), and the semiconductor substrate () is formed with a circuit element including, for example, a MOS transistor (). The shield wiring layer () is composed of a lower shield line (), a third insulating film (), an upper shield line (), and a fourth insulating film () sequentially stacked above a second insulating film (). The directions in which the lower and upper shield lines () and () are arranged intersect each other.


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