The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Mar. 06, 2003
Mrinal Kanti Das, Durham, NC (US);
Lori A. Lipkin, Raleigh, NC (US);
John W. Palmour, Raleigh, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
Helmut Hagleitner, Zebulon, NC (US);
Mrinal Kanti Das, Durham, NC (US);
Lori A. Lipkin, Raleigh, NC (US);
John W. Palmour, Raleigh, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
Helmut Hagleitner, Zebulon, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.