The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Dec. 30, 2003
Woo-sik Kim, Kyunggi-do, KR;
Ji-hye Yi, Yongin-shi, KR;
Woo-Sik Kim, Kyunggi-do, KR;
Ji-Hye Yi, Yongin-shi, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
The present invention discloses a semiconductor memory device having a multiple tunnel junction pattern and a method of forming the same. The semiconductor memory device includes a unit cell composed of planar transistor and vertical transistors. The planar transistor includes first and second conductive regions formed at predetermined regions of a semiconductor substrate and a storage node stacked on a channel region therebetween. The vertical transistor includes a storage node, a multiple tunnel junction pattern stacked thereon, a data line stacked thereon, and a word line for covering both sidewalls of the storage node and the multiple tunnel junction pattern. Width of the multiple tunnel junction pattern is narrower than the storage node and data lines. Semiconductor layers and tunnel oxide layers are alternately and repeatedly stacked and anisotropically etched to form the multiple tunnel junction pattern of narrow width while forming the data line and the storage node.