The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Jul. 31, 2003
Applicant:
Pei-yang Yan, Saratoga, CA (US);
Inventor:
Pei-Yang Yan, Saratoga, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An extreme ultraviolet lithography mask may be formed of a multilayered stack covered by a spacer layer, such as silicon or boron carbide, in turn covered by a thin layer to prevent inter-diffusion, and finally covered by a capping layer of ruthenium. By optimizing the spacer layer thickness based on the capping layer, the optical properties may be improved.