The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2006

Filed:

Mar. 02, 2004
Applicants:

Todd P. Lukanc, San Jose, CA (US);

Sarah N. Mcgowan, San Francisco, CA (US);

Luigi Capodieci, Santa Cruz, CA (US);

Bhanwar Singh, Morgan Hill, CA (US);

Joerg Reiss, Sunnyvale, CA (US);

Inventors:

Todd P. Lukanc, San Jose, CA (US);

Sarah N. McGowan, San Francisco, CA (US);

Luigi Capodieci, Santa Cruz, CA (US);

Bhanwar Singh, Morgan Hill, CA (US);

Joerg Reiss, Sunnyvale, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

A microdevice for forming a part of an integrated circuit and method for fabricating are disclosed. The microdevice can include a first conductive region and a second conductive region having a channel region interposed therebetween. The mircodevice has a channel region controlling component disposed over the channel region and separated therefrom by at least one dielectric layer. The channel region controlling component has a non-linear structural characteristic derived from a non-linear structural characteristic of a photo resist feature used as an etch mask for the channel region controlling component.


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