The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Feb. 18, 2004
Dun-nian Yaung, Taipei, TW;
Sou-kuo Wu, Hsinchu, TW;
Ho-ching Chien, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
An image sensor has a vertically integrated thin-film photodiode. In one implementation, the image sensor has a substrate, an interconnection structure adjacent to the substrate, wherein the interconnection structure includes a top metal layer comprising a plurality of first metal pads for thin-film photodiodes and a second metal pad for a ground pad, a dielectric layer with a plurality of first openings and second opening disposed on the interconnection structure, a plurality of bottom doped layers with a first conductive type respectively disposed in the first openings, wherein each bottom doped layer contacts the corresponding first metal pad without extending outside the surface of the corresponding first metal pad, an I-type layer disposed over at least one bottom doped layer and the dielectric layer, an upper doped layer with a second conductive type disposed over the I-type layer, and a transparent electrode disposed over the upper doped layer and contacting the second metal pad through the second opening in the dielectric layer.