The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Oct. 22, 2003
Masato Yamada, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Masanobu Takahashi, Annaka, JP;
Kingo Suzuki, Annaka, JP;
Shinji Nozaki, Kawasaki, JP;
Kazuo Uchida, Tokyo, JP;
Hiroshi Morisaki, Tsurugashima, JP;
Masato Yamada, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Masanobu Takahashi, Annaka, JP;
Kingo Suzuki, Annaka, JP;
Shinji Nozaki, Kawasaki, JP;
Kazuo Uchida, Tokyo, JP;
Hiroshi Morisaki, Tsurugashima, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Nanoteco Corporation, Tokyo, JP;
Abstract
A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.