The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Dec. 23, 2002
Wuping Liu, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
Alan Cuthbertson, Singapore, SG;
Wuping Liu, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
Alan Cuthbertson, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
An integrated circuit manufacturing method includes providing a base, forming a first conductor, forming a first barrier layer, forming a first dielectric layer, and forming a masking layer. The method further including forming a first via opening in the masking layer, forming a first trench opening in the masking layer, and simultaneously forming a second via opening in a layer under the masking layer, and forming a second trench opening through the masking layer and in the layer under the masking layer and simultaneously forming a third via opening in another layer under the masking layer. The method further including removing the first barrier layer using the third via opening and the masking layer to form a trench and a via, and filling the trench and the via with a conductor to form a trench and via conductor in contact with the first conductor.