The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Jul. 16, 2003
Applicant:
Huey-chiang Liou, Fremont, CA (US);
Inventor:
Huey-Chiang Liou, Fremont, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/4763 (2006.01); H01L 29/00 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method and structure for integrating conductive and dielectric materials in a microelectronic structure having air gaps are disclosed. Certain embodiments of the invention comprise isolating dielectric layers from conductive layers using an etch stop layer to facilitate controlled removal of portions of the dielectric layers and formation of air gaps or voids. Capping and peripheral structural layers may be incorporated to increase the structural integrity of the integration subsequent to removal of sacrificial material.