The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Mar. 30, 2004
Applicants:
Ching-chen Hao, Hsin-Chu, TW;
Chao-chi Chen, Hsin-Chu, TW;
Chih-heng Shen, Hsin-Chu, TW;
Chi-hsun Hsieh, Hsin-Chu, TW;
Inventors:
Ching-Chen Hao, Hsin-Chu, TW;
Chao-Chi Chen, Hsin-Chu, TW;
Chih-Heng Shen, Hsin-Chu, TW;
Chi-Hsun Hsieh, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thermal oxidation method for forming a gate dielectric layer for use within a field effect transistor device employs a thermal oxidizing atmosphere comprising a halogen getter material. By employing the halogen getter material, the field effect transistor device is formed with enhanced performance, in particular with respect to negative bias temperature instability lifetime.