The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6994940 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 07, 2006

Filed:

Aug. 12, 2003
Applicant:

Shuji Nakao, Hyogo, JP;

Inventor:

Shuji Nakao, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase shift mask of the present invention has a half tone light blocking film formed on a substrate and having an aperture for exposing a portion of the surface of substrate. The phase of the exposure light that has been transmitted through half tone light blocking film differs from the phase of the exposure light that has been transmitted through aperture by 180°. The light transmission rate defined by the ratio of the light intensity of the exposure light that has been transmitted through half tone light blocking film to the light intensity of the exposure light that has been transmitted through aperture is not less than 15% to not more than 25%. The dimension of aperture is not less than 0.26 to not more than 0.45 according to the measurement wherein wavelength λ of the exposure light/numerical aperture NA is set at 1.


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Nakao, Shuji. (2006). Phase shift mask, method for forming pattern using phase shift mask and manufacturing method for electronic device (U.S. Patent No. 6994940). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6994940

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