The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Aug. 31, 1999
Zhongyi Xia, Boise, ID (US);
Zhongyi Xia, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
An image detection apparatus including a field emission array and signal transmission circuits in communication with pixels of the field emission array. The field emission array includes a p-type substrate with an array of n-wells therein. Emitter tips, in communication with the n-wells, protrude from an emission surface of the p-type substrate. A detection surface of the p-type substrate is located opposite the emission surface thereof. Each signal transmission circuit of the field emission array includes a capacitor, a baseline potential transistor, and a signal transmission transistor. A first side of the capacitor communicates with a corresponding n-well of the field emission array. A second side of the capacitor communicates with the baseline potential transistor and the signal transmission transistor. The baseline potential transistor and the signal transmission transistor may share a drain. As radiation, such as visible light or near infrared radiation, impinges the detection surface of the field emission array, electron-hole pairs are created in p-n junctions between the p-type substrate and the n-wells. As a result, electrons are transferred from the impinged p-n junctions into the n-well adjacent thereto. The charge created in the n-well represents the intensity or wavelength of the radiation that has impinged the p-n junction. A signal representative of the wavelength or intensity of the impinging radiation is transmitted by the signal transmission circuit, and may be scanned by a scan circuit. Upon applying a relatively positive potential to an extraction grid associated with the field emission array, the excess electrons in n-wells may be emitted from an emitter tip adjacent the n-well. The emitted electrons may impinge a corresponding display pixel of a display so as to create a visible image thereon.