The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Oct. 12, 2001
Applicants:
Daniel Xu, Mountain View, CA (US);
Tyler A. Lowery, San Jose, CA (US);
Inventors:
Daniel Xu, Mountain View, CA (US);
Tyler A. Lowery, San Jose, CA (US);
Assignee:
Ovonyx, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a sandwich of a more lightly doped N type region over a more heavily doped N type region over a less heavily doped N type region. As a result of the configuration of the N type regions forming the buried wordline, the leakage current of the buried wordline to the substrate under reverse bias conditions may be significantly reduced.