The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Jan. 20, 2004
Jiaw-ren Shin, Hsin-Chu, TW;
Jian-hsing Lee, Hsin-Chu, TW;
Shui-hung Chen, Hsin-Chu, TW;
Abstract
A CMOS semiconductor product employs a first doped well of a first polarity and a second doped well of a second polarity opposite the first polarity, each formed laterally separated within a semiconductor substrate. The first doped well is further embedded within a third doped well of the second polarity that further separates the first doped well from the second doped well. The third doped well provides latch-up resistance for a pair of MOS transistors formed within the first doped well and the second doped well.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile