The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Jun. 24, 2004
Katsuhiko Hieda, Yokohama, JP;
Kazuya Matsuzawa, Kawasaki, JP;
Daisuke Hagishima, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Disclosed is a semiconductor device comprising an underlying insulating film having a depression, a semiconductor structure which includes a first semiconductor portion having a portion formed on the underlying insulating film and a first overlap portion which overlaps the depression, a second semiconductor portion having a portion formed on the underlying insulating film and a second overlap portion which overlaps the depression, and a third semiconductor portion disposed between the first and second semiconductor portions and having a portion disposed above the depression, wherein overlap width of the first overlap portion and overlap width of the second overlap portion are equal to each other, a gate electrode including a first electrode portion covering upper and side surfaces of the third semiconductor portion and a second electrode portion formed in the depression, and a gate insulating film interposed between the semiconductor structure and the gate electrode.