The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Feb. 20, 2004
Cécile Aulnette, Grenoble, FR;
Benoît Bataillou, Grenoble, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Hubert Moriceau, Saint Egreve, FR;
Cécile Aulnette, Grenoble, FR;
Benoît Bataillou, Grenoble, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Hubert Moriceau, Saint Egreve, FR;
S.O.I.Tec Silicon on Insulator Technologies S.A., Bernin, FR;
Commissariat à l' Energie Atomique (CEA), Paris, FR;
Abstract
A method of producing a semiconductor structure having at least one support substrate and an ultrathin layer. The method includes bonding a support substrate to a source substrate, detaching a useful layer along a zone of weakness to obtain an intermediate structure including at least the transferred useful layer and the support substrate, and treating the transferred useful layer to obtain an ultrathin layer on the support substrate. The source substrate includes a front face and a zone of weakness below the front face that defines the useful layer, and the useful layer is sufficiently thick to withstand heat treatments without forming defects therein so that it can be reduced in thickness to form the ultrathin layer. The resulting ultrathin layer is suitable for use in applications in the fields of electronics, optoelectronics or optics.