The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Mar. 20, 2003
Michael A. Kneissl, Mountain View, CA (US);
Linda T. Romano, Sunnyvale, CA (US);
Christian G. Van DE Walle, Sunnyvale, CA (US);
Michael A. Kneissl, Mountain View, CA (US);
Linda T. Romano, Sunnyvale, CA (US);
Christian G. Van de Walle, Sunnyvale, CA (US);
Xerox Corporation, Stamford, CT (US);
Abstract
A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiOisolation structure formed on opposite sides of the ITO upper cladding structure to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer below the SiOisolation structure. An optional p-type current barrier layer (e.g., AlGaN:Mg having a thickness of approximatelynm) is formed between the InGaN-MQW region and a p-GaN upper waveguide layer to impede electron leakage from the InGaN-MQW region.