The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2006

Filed:

Feb. 02, 2004
Applicants:

Krishnashree Achuthan, San Ramon, CA (US);

Patrick K. Cheung, Sunnyvale, CA (US);

Cyrus Tabery, Sunnyvale, CA (US);

Jean Y. Yang, Sunnyvale, CA (US);

Ning Cheng, Cupertino, CA (US);

Minh Van Ngo, Fremont, CA (US);

Inventors:

Krishnashree Achuthan, San Ramon, CA (US);

Patrick K. Cheung, Sunnyvale, CA (US);

Cyrus Tabery, Sunnyvale, CA (US);

Jean Y. Yang, Sunnyvale, CA (US);

Ning Cheng, Cupertino, CA (US);

Minh Van Ngo, Fremont, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell in a semiconductor device; depositing and planarizing an interlevel dielectric layer over the charge trapping dielectric flash memory cell and depositing over the planarized interlevel dielectric layer at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material.


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