The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Jun. 27, 2003
Kouji Nakahara, Kunitachi, JP;
Tomonobu Tsuchiya, Hachiouji, JP;
Akira Taike, Kokubunji, JP;
Kazunori Shinoda, Tokorozawa, JP;
Kouji Nakahara, Kunitachi, JP;
Tomonobu Tsuchiya, Hachiouji, JP;
Akira Taike, Kokubunji, JP;
Kazunori Shinoda, Tokorozawa, JP;
Hitachi, Ltd., Tokyo, JP;
Opnext Japan, Inc., Kanagawa, JP;
Abstract
The prior art distributed feedback laser having an InGaAlAs active layer involves a problem that its laser characteristics are deteriorated at high temperature due to the high device resistance. According to the present invention, a ridge type laser is fabricated by: forming an InGaAlAs-MQW layeron a n-type InP substrate; growing a p-type InGaAlAs-GRIN-SCH layer, a p-type InAlAs electron stopping layerand a p-type grating layerin this order on the InGaAlAs-MQW layer; forming a grating; and regrowing a p-type InP cladding layerand a p-type InGaAs contact layer in this order. The concave depth of the grating is smaller than the thickness of the p-type grating layer