The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Dec. 13, 2004
Yoshihiko Kanzawa, Yawata, JP;
Teruhito Ohnishi, Hirakata, JP;
Ken Idota, Moriguchi, JP;
Tohru Saitoh, Ibaraki, JP;
Akira Asai, Osaka, JP;
Yoshihiko Kanzawa, Yawata, JP;
Teruhito Ohnishi, Hirakata, JP;
Ken Idota, Moriguchi, JP;
Tohru Saitoh, Ibaraki, JP;
Akira Asai, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer () that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (), and a third step for removing the carbon atoms contained in the semiconductor crystal layer () by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.