The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Jul. 08, 2003
Applicants:
Kwan Yong Lim, Suwon-Shi, KR;
Heung Jae Cho, Euiwang-Shi, KR;
Tae Hang Ahn, Seoul, KR;
Inventors:
Assignee:
Hynix Semiconductor Inc., Kyungki-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is the method of forming the gate in the semiconductor device. The present method can prevent abnormal oxidization and lifting at the interface of the stack gate consisting of polysilicon and a metal and can be applied to even the single metal gate, by replacing a re-oxidization process for recovering damage of the gate oxide film generated in the gate patterning process with the oxygen plasma treatment.
Lim, Kwan. (2006). Method of forming gates in semiconductor devices (U.S. Patent No. 6987056). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6987056
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile