The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Oct. 30, 2003
Frank A. Baiocchi, Allentown, PA (US);
John Charles Desko, Wescosville, PA (US);
Bailey R. Jones, Mohnton, PA (US);
Sean Lian, Allentown, PA (US);
Frank A. Baiocchi, Allentown, PA (US);
John Charles Desko, Wescosville, PA (US);
Bailey R. Jones, Mohnton, PA (US);
Sean Lian, Allentown, PA (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A method of forming a semiconductor structure in a semiconductor wafer includes the steps of forming an epitaxial layer on at least a portion of a semiconductor substrate of a first conductivity type and forming at least one trench through the epitaxial layer to at least partially expose the substrate. The method further includes doping at least one or more sidewalls of the at least one trench with an impurity of a known concentration level. The at least one trench is then substantially filled with a filler material. In this manner, a low-resistance electrical path is formed between an upper surface of the epitaxial layer and the substrate.