The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Jul. 20, 2001
Yasuki Yoshihisa, Tokyo, JP;
Yasuki Yoshihisa, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device is disclosed involving a semiconductor substrate which contains a buried layer of a predetermined conductivity type as well as trenches deep enough to penetrate through the buried layer for element isolation purposes. Each of the trenches is formed in a boundary area between two regions with a potential difference developing therebetween, and an open-potential area is formed along the trench in the boundary area. This structure prevents leaks from occurring in areas interposed typically between an NPN region and an NMOS region in a BiCMOS semiconductor device, or any other area between two regions subject to two different potential levels.