The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Jan. 23, 2002
Applicants:
Vincent Fortin, Santa Clara, CA (US);
Kuei-chang Tsai, San Jose, CA (US);
Inventors:
Vincent Fortin, Santa Clara, CA (US);
Kuei-Chang Tsai, San Jose, CA (US);
Assignee:
Mosel Vitelic, Inc., Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
A cobalt silicide fabrication process entails first depositing a cobalt layer () on a silicon-containing EPROM region. A titanium layer () is formed over the cobalt layer by ionized physical vapor deposition ('IPVD') to protect the cobalt layer from contaminant gases. Cobalt of the cobalt layer is reacted with silicon of the EPROM region to form a cobalt silicide layer () after which the titanium layer and any unreacted cobalt are removed. Use of IPVD to form the titanium layer by improves the step coverage to produce a better cobalt silicide layer.