The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6984475 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 10, 2006

Filed:

Nov. 03, 2003
Applicants:

Harry J. Levinson, Saratoga, CA (US);

Bruno M. Lafontaine, Pleasanton, CA (US);

Ivan Lalovic, Mountain View, CA (US);

Adam R. Pawloski, San Jose, CA (US);

Inventors:

Harry J. Levinson, Saratoga, CA (US);

Bruno M. LaFontaine, Pleasanton, CA (US);

Ivan Lalovic, Mountain View, CA (US);

Adam R. Pawloski, San Jose, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An extreme ultraviolet (EUV) lithography mask blank. The mask blank can include a substrate having a reflector film disposed over an upper surface of the substrate. The mask blank is provided with structural features to facilitate indirect grounding of the reflector film.


Find Patent Forward Citations

Levinson, Harry. (2006). Extreme ultraviolet (euv) lithography masks (U.S. Patent No. 6984475). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6984475

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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