The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6982555 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 03, 2006

Filed:

Feb. 13, 2004
Applicants:

Kyoji Yamashita, Kyoto, JP;

Tatsuya Kunikiyo, Tokyo, JP;

Tetsuya Watanabe, Tokyo, JP;

Toshiki Kanamoto, Tokyo, JP;

Inventors:

Kyoji Yamashita, Kyoto, JP;

Tatsuya Kunikiyo, Tokyo, JP;

Tetsuya Watanabe, Tokyo, JP;

Toshiki Kanamoto, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/08 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

PMISFETs and NMISFETs are placed in a capacitance measuring circuit. Each of interconnects is connected via the corresponding PMISFET through a charging voltage supply part to a power supply pad and via the corresponding NMISFET through a current sampling part to a current-monitoring pad. A current I can be measured by bringing a probe of an ammeter into contact with the current-monitoring pad.


Find Patent Forward Citations

Yamashita, Kyoji. (2006). Semiconductor device (U.S. Patent No. 6982555). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6982555

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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