The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Jul. 24, 2002
Jun-ya Ishizaki, Annaka, JP;
Jun-ya Ishizaki, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
In a MgZnO layer composing an active layer or a p-type cladding layer, a p-type oxide layerwhich is different from MgZnO-type oxide and has a p-type conductivity is disposed. Because a function of absorbing and compensating electrons in this configuration is owned by the p-type oxide layer localized in the MgZnO layer, it is no more necessary to add a large amount of dopant, and this is successful in obtaining a p-type or i-type MgZnO-type oxide having a desirable quality, and in realizing a high-emission-efficiency, light-emitting device capable of emitting ultraviolet or blue light. Adoption of a junction structure, in which at least either of the p-type cladding layer and the n-type cladding layer comprises a first crystal layer, and a second crystal layer which is hetero-bonded to the first crystal layer, and on the side thereof opposite to the active layer and has a band gap energy smaller than that of the first crystal layer, is successful in effectively injecting the carrier to the active layer, and consequently in raising the emission efficiency.