The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2006

Filed:

Aug. 06, 2003
Applicants:

Mun-mo Jeong, Seoul, KR;

Chang-huhn Lee, Gyeonggi-do, KR;

Makoto Yoshida, Gyeonggi-do, KR;

Inventors:

Mun-Mo Jeong, Seoul, KR;

Chang-Huhn Lee, Gyeonggi-do, KR;

Makoto Yoshida, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device with a bitline structure has a stud type capping layer. A method of fabricating the same achieves sufficient process margins and reduces parasitic capacitance. The device may include an insulating film formed on a semiconductor substrate and having a bitline contact and a groove-shaped bitline pattern, a bitline formed on the bitline contact and on a portion of the bitline pattern and that is surrounded by the insulating film, and a bitline capping layer formed on the bitline within the bitline pattern and the insulating film that protrudes from the insulating film. A protruded portion of the bitline capping layer is wider than the width of the bitline.


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