The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Jun. 26, 2003
Steven C. Avanzino, Cupertino, CA (US);
Pin-chin Connie Wang, Menlo Park, CA (US);
Minh Van Ngo, Fremont, CA (US);
Steven C. Avanzino, Cupertino, CA (US);
Pin-Chin Connie Wang, Menlo Park, CA (US);
Minh Van Ngo, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An integrated circuit is provided having a semiconductor substrate with a semiconductor device. A dielectric layer formed over the semiconductor substrate has an opening provided therein. The dielectric layer is of non-barrier dielectric material capable of being changed into a barrier dielectric material. The dielectric layer around the opening is changed into the barrier dielectric material and the conductor core material is deposited to fill the opening. The conductor core is processed to form a channel for the integrated circuit. This allows a selective conversion of dielectric materials with no diffusion barrier properties to be converted into good barrier materials which allows larger channels and shrinkage of the integrated circuit.