The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Sep. 03, 2003
Applicants:
Atsushi Azuma, Wappingers Falls, NY (US);
Yusuke Kohyama, Poughkeepsie, NY (US);
Kaori Umezawa, Kamakura, JP;
Inventors:
Atsushi Azuma, Wappingers Falls, NY (US);
Yusuke Kohyama, Poughkeepsie, NY (US);
Kaori Umezawa, Kamakura, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L027/01 ; H01L027/12 ; H01L031/0392 ;
U.S. Cl.
CPC ...
Abstract
In the SOI region of a semiconductor substrate, a BOX layer is formed underneath with backgate electrodes to control the threshold voltages of MOS transistors formed in the SOI region.