The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Jan. 23, 2003
Steven Thomas Peake, Chesire, GB;
Christopher Martin Rogers, Manchester, GB;
Steven Thomas Peake, Chesire, GB;
Christopher Martin Rogers, Manchester, GB;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A cellular MOSFET device has a cellular area (CA) comprising active MOSFET cells, and one or more Schottky diode areas (SA) accommodated within a deep end region () at a lateral boundary of this cellular area (CA). This deep end region () is laterally divided so as to accommodate the diode area (SA) therein. A diode portion () of the first conductivity type of the drain region () extends upwardly through the laterally-divided deep end region () that is of the second conductivity type. The Schotty barrier () formed with this diode portion () terminates laterally in the laterally-divided portions () which serve as a guard region and field-relief region for the Schottky diode.