The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Jun. 16, 2003
Applicants:
Michael Sommer, Raubling, DE;
Gerhard Enders, Olching, DE;
Inventors:
Michael Sommer, Raubling, DE;
Gerhard Enders, Olching, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L027/108 ; H01L029/76 ; H01L029/94 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract
The memory cell according to the invention has a vertical selection transistor, via whose channel region the inner electrode of the trench capacitor can be connected to a bit line. The large extent of the channel region in the bit line direction means that the trench capacitor can be rapidly charged and read. The channel region is led to the bit line through an associated word line, which completely or partially encloses the channel region. A conductive channel can be formed within the channel region depending on the potential of the word line.