The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6979645 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 27, 2005

Filed:

Oct. 07, 2003
Applicants:

Hiroshi Horikoshi, Kanagawa, JP;

Yuji Segawa, Tokyo, JP;

Takeshi Nogami, Kanagawa, JP;

Inventors:

Hiroshi Horikoshi, Kanagawa, JP;

Yuji Segawa, Tokyo, JP;

Takeshi Nogami, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/44 ;
U.S. Cl.
CPC ...
Abstract

A method of producing a semiconductor device capable of suppressing damages by corrosion on wiring in a catalyst process performed in electroless plating processing on a Co base material, etc. in producing a semiconductor device having wiring of Cu, etc., having steps of forming metal wiring including an additive on a first insulation film formed in a semiconductor substrate, and forming on the metal wiring a barrier layer for preventing diffusion of constituting elements of the metal wiring, wherein said additive is an element to reduce corrosion of the metal wiring at the time of forming the barrier layer in the step of forming the metal wiring.


Find Patent Forward Citations

Horikoshi, Hiroshi. (2005). Method of producing a semiconductor device having copper wiring (U.S. Patent No. 6979645). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6979645

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