The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2005

Filed:

Dec. 02, 2003
Applicants:

Hong-soo Kim, Kyungki-do, KR;

Kyu-charn Park, Kyungki-do, KR;

Jung-dal Choi, Kyungki-do, KR;

Seong-soon Cho, Kyungki-do, KR;

Inventors:

Hong-Soo Kim, Kyungki-do, KR;

Kyu-Charn Park, Kyungki-do, KR;

Jung-Dal Choi, Kyungki-do, KR;

Seong-Soon Cho, Kyungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/76 ;
U.S. Cl.
CPC ...
Abstract

Semiconductor devices and methods of forming devices that have field oxides in trenches are disclosed. According to the methods, a semiconductor substrate is prepared. An upper trench is formed at a predetermined region of the semiconductor substrate and a bottom trench is formed at a bottom surface of the upper trench. A field oxide is formed to fill the bottom trench and the upper trench. At this time, the upper trench has a wider width than the bottom trench.


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