The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
May. 11, 2005
Chun-pei Wu, Nan-Tao, TW;
Huei-huarng Chen, Chang-Hua, TW;
Hong-chi Chen, Kaohsiung, TW;
Hsuan-ling Kao, Taipei, TW;
Chun-Pei Wu, Nan-Tao, TW;
Huei-Huarng Chen, Chang-Hua, TW;
Hong-Chi Chen, Kaohsiung, TW;
Hsuan-Ling Kao, Taipei, TW;
Macronix International Co., Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a flash memory cell is provided. After an ONO dielectric layer is formed on a first conductive layer over a tunnel oxide layer, a second conductive layer is formed on the ONO dielectric layer. Then, patterning the second conductive layer to form a periphery region comprising an exposed portion of a semiconductor substrate and a memory cell region comprising the left second conductive layer. During the present process, the ONO dielectric layer is protected from being exposed in various solvents and gases with the second conductive layer. Thus, a flash memory cell with a high-quality ONO gate dielectric layer, without increasing complexity of the process and additional masks, is obtained.