The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Aug. 28, 2001
Hao Fang, Cupertino, CA (US);
Yue-song He, San Jose, CA (US);
Mark S. Chang, Los Altos, CA (US);
Kent K. Chang, Cupertino, CA (US);
Hao Fang, Cupertino, CA (US);
Yue-Song He, San Jose, CA (US);
Mark S. Chang, Los Altos, CA (US);
Kent K. Chang, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In a first aspect of the present invention, a method of fabricating a flash memory device is disclosed. The method comprises the steps of providing a portion of a dual gate oxide in a periphery area of the memory device and then simultaneously providing a dual gate oxide in a core area of the memory device and completing the dual gate oxide in the periphery area. Finally, a nitridation process is provided in both the core and periphery areas subsequent to the previous steps. In a second aspect of the present invention, a flash memory device is disclosed. The flash memory device comprises core area having a plurality of memory transistors comprising an oxide layer, a first poly layer, an interpoly dielectric layer, and a second poly layer. The flash memory device further comprises a periphery area having a plurality of transistors comprising an oxide layer, a portion of the first poly layer, and the second poly layer. According to the present invention, the method for fabricating the flash memory device is a simplified process that results in a significant improvement in the oxide reliability in the core and periphery areas and also eliminates the nitrogen contamination problem in the periphery area.