The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Oct. 31, 2001
Wen-ben Chou, Palo Alto, CA (US);
Shih-yuan Cheng, Foster City, CA (US);
Wayne Tu, Fremont, CA (US);
Wen-Ben Chou, Palo Alto, CA (US);
Shih-Yuan Cheng, Foster City, CA (US);
Wayne Tu, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for fabricating a spacer of a gate structure is provided. The method performing a first etch process implementing a first etchant gas. The first etch process is configured to implement an interferometry endpoint (IEP) detection method to detect a removal of a portion of a spacer layer having a specific thickness from over the surface of the substrate, thus leaving a thin spacer layer. The method further includes performing a second etch process for a predetermined period of time implementing a second etchant gas. The second etch process is configured to remove the thin spacer layer, leaving the spacer for the gate structure.