The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Jun. 02, 2003
Chung-peng Hao, Taipei, TW;
Hui-min Mao, Tainan Hsien, TW;
Yi-nan Chen, Taipei, TW;
Tzu-ching Tsai, Taichung Hsien, TW;
Chung-Peng Hao, Taipei, TW;
Hui-Min Mao, Tainan Hsien, TW;
Yi-Nan Chen, Taipei, TW;
Tzu-Ching Tsai, Taichung Hsien, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A manufacturing method for a MOSFET gate structure. The method comprises providing a substrate, sequentially depositing a pad layer and a dielectric layer thereon, defining a gate trench passing through the dielectric layer and the pad layer to expose a predetermined gate area of the substrate, sequentially forming a gate dielectric layer, a first conductive layer, a second conductive layer, and a cap layer on the exposed substrate in the gate trench to form a damascene gate structure, and removing the dielectric layer.