The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Oct. 16, 2003
Applicants:
Chih-hsin Ko, Kaohsiung, TW;
Yee-chia Yeo, Hsin-Chu, TW;
Chung-hu GE, Taipei, TW;
Wen-chin Lee, Hsin-Chu, TW;
Inventors:
Chih-Hsin Ko, Kaohsiung, TW;
Yee-Chia Yeo, Hsin-Chu, TW;
Chung-Hu Ge, Taipei, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/76 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor isolation trench includes a substrate and a trench formed therein. The trench is lined with a nitrogen-containing liner and filled with a dielectric material. The nitrogen-containing liner preferably contacts the active region of a device, such as a transistor, located adjacent to the trench.