The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2005

Filed:

Oct. 16, 2001
Applicants:

Larry L. Berger, Chadds Ford, PA (US);

Michael Karl Crawford, Glen Mills, PA (US);

Jerald Feldman, Wilmington, DE (US);

Lynda Kaye Johnson, Wilmington, DE (US);

Frank Leonard Schadt, Iii, Wilmington, DE (US);

Fredrick Claus Zumsteg, Jr., Wilmington, DE (US);

Inventors:

Larry L. Berger, Chadds Ford, PA (US);

Michael Karl Crawford, Glen Mills, PA (US);

Jerald Feldman, Wilmington, DE (US);

Lynda Kaye Johnson, Wilmington, DE (US);

Frank Leonard Schadt, III, Wilmington, DE (US);

Fredrick Claus Zumsteg, Jr., Wilmington, DE (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F007/038 ; G03F007/039 ; C08F232/08 ;
U.S. Cl.
CPC ...
Abstract

A fluorine-containing polymer prepared from at least a spacer group selected from the group consisting of ethylene, alpha-olefins, 1,1'-disubstituted olefins, vinyl alcohols, vinyl ethers, and 1,3-dienes; and a norbornyl radical containing a functional group containing the structure: —C(R)(R)Orwherein Rand Rare the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF)wherein n is an integer ranging from 2 to about 10 and Ris a hydrogen atom or an acid- or base-labile protecting group; r is an integer ranging from 0-4. The fluorine-containing polymer has an absorption coefficient of less than 4.0 mm−at a wavelength of 157 nm. These polymers are useful in photoresist compositions for microlithography. They exhibit high transparency at this short wavelength and also possess other key properties, including good plasma etch resistance and adhesive properties.


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